Semiconductor diode laser

Coherent light generators – Particular active media – Semiconductor

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372 20, 372 97, H01S 319

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active

046203079

ABSTRACT:
A semiconductor diode laser for tunable single-frequency laser radiation has a plurality of laser-active strips associated with a semiconductor body having first and second reflective end surfaces. The first end surface has laser radiation emitted and coupled out therefrom. One of the strips is an emitting laser-active strip which emits the laser radiation and the further laser-active strips are provided at both sides of the emitting strip. The further strips are shorter than the emitting strip and are provided such that respective resonators corresponding to each strip are provided with mirrors or reflectors at both ends thereof. A first end of the strips terminates in front of the first end face of the semiconductor body.

REFERENCES:
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IEEE Journal of Quantum Electronics, vol. Q#-18, No. 10, Oct. 1982, "Etched Mirror and Groove-Coupled GalnASP/InP Laser Devices for Integrated Optics", by Goldren et al., pp. 1679-1688.
Appl. Phys. Lett. 43(6), Sep. 15, 1983, "Electronic Wavelength Tuning with Semiconductor Integrated Etalon Interference Lasers", by Arsam Antreasyan et al., pp. 530-532.
Electronics Letters, Oct. 27 1983, vol. 19, No. 22, "Electrical Tuning of Semiconductor Interferometric Laser", pp. 926 and 927.
Appl. Phys. Lett. 43 (6), Sep. 15, 1983, "Phase-Locked Semiconductor Laser Array with Separate Contacts", by J. Katz et al., pp. 521-523.
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