Semiconductor diode in which electrons are injected into a rever

Details Semiconductor diode in which electrons are injected into a rever Semiconductor diode in which electrons are injected into a rever

1995-09-12

1997-04-08

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257140, 257144, 257152, 257163, H01L 2974

Patent

active

056190476

ABSTRACT:
A diode (1) is specified which has electron injection means on the anode-side principal surface (3). After the reverse-current peak has been traversed, said means inject electrons into the anode emitter. This compensates for holes and the danger of a dynamic field overshoot, which may result in an avalanche breakdown, is reduced. The electron injection means preferably comprise an n-channel MOS cell. High voltages and high dI/dt values can be safely handled with a diode according to the invention. A diode in accordance with the invention is preferably used as freewheeling diode in a converter circuit arrangement.

REFERENCES:
Article entitled: "Comparison of High Voltage Power Rectifier Structures" by M. Mehrotra and B. J. Baliga, Proceedings of the ISPSD, pp. 199-204, IEEE 1993.

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