Semiconductor diode having a semiconductor die with a...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

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C257S099000

Reexamination Certificate

active

06858873

ABSTRACT:
A semiconductor diode has a semiconductor die that includes a substrate, a first semiconductor film, a second semiconductor film, a first metal contact, and a second metal contact. The semiconductor die defines two diagonally opposite first corners and two diagonally opposite second corners. The first semiconductor film has an exposed area that is exposed from the second semiconductor film and that extends between one of the first corners and one of the second corners. The first metal contact is formed on the exposed area and has an extension section and a wire-bonding section that has a width greater than that of the extension section and a length less than that of the extension section. The second metal contact extends between the other one of the first corners and the other one of the second corners and has an extension section and a wire-bonding section that has a width greater than that of the extension section and a length less than that of the extension section.

REFERENCES:
patent: 5357121 (1994-10-01), Miyashita et al.
patent: 6107644 (2000-08-01), Shakuda et al.
patent: 6169294 (2001-01-01), Biing-Jye et al.
patent: 6204512 (2001-03-01), Nakamura et al.
patent: 6410940 (2002-06-01), Jiang et al.
patent: 6465808 (2002-10-01), Lin
patent: 6614056 (2003-09-01), Tarsa et al.
patent: 20020047128 (2002-04-01), Song et al.

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