Semiconductor diode device with non-planar heatsink and method o

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257719, 257727, 257796, H01L 2334

Patent

active

057510610

ABSTRACT:
A semiconductor diode device (10) includes two heatsinks (11, 12), a semiconductor substrate (15) having a p-n junction (35) and located between the two heatsinks (11, 12), solder (13, 14) between the heatsinks (11, 12) and the semiconductor substrate (15), and a packaging material (16) covering the semiconductor substrate (15), the solder (13, 14), and a portion of the two heatsinks (11, 12). The two heatsinks (11, 12) each have a curved surface (21, 22), which reduces tilting of the semiconductor substrate (15), reduces temperature gradients across surfaces (23, 24) of the semiconductor substrate (15), and improves the reliability of the semiconductor diode device (10). The two heatsinks (11, 12) also include protrusions (19, 20), which help to keep the packaging material (16) covering the curved surfaces (21, 22) of the heatsinks (11, 12).

REFERENCES:
patent: 3996602 (1976-12-01), Goldberg et al.
patent: 4093958 (1978-06-01), Riccio, Jr.
patent: 4759829 (1988-07-01), Fuccello, Sr. et al.
patent: 4935803 (1990-06-01), Kalfus et al.
patent: 5081067 (1992-01-01), Shimizu et al.
patent: 5172755 (1992-12-01), Samarov

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor diode device with non-planar heatsink and method o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor diode device with non-planar heatsink and method o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor diode device with non-planar heatsink and method o will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-983492

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.