Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Patent
1995-12-18
1998-05-12
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
257719, 257727, 257796, H01L 2334
Patent
active
057510610
ABSTRACT:
A semiconductor diode device (10) includes two heatsinks (11, 12), a semiconductor substrate (15) having a p-n junction (35) and located between the two heatsinks (11, 12), solder (13, 14) between the heatsinks (11, 12) and the semiconductor substrate (15), and a packaging material (16) covering the semiconductor substrate (15), the solder (13, 14), and a portion of the two heatsinks (11, 12). The two heatsinks (11, 12) each have a curved surface (21, 22), which reduces tilting of the semiconductor substrate (15), reduces temperature gradients across surfaces (23, 24) of the semiconductor substrate (15), and improves the reliability of the semiconductor diode device (10). The two heatsinks (11, 12) also include protrusions (19, 20), which help to keep the packaging material (16) covering the curved surfaces (21, 22) of the heatsinks (11, 12).
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Le Hiep M.
Lippmann James G.
Martin Jean-Baptiste
Mays Lonne L.
Chen George C.
Motorola Inc.
Tran Minh-Loan
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