Semiconductor diode device with lateral transistor

Details Semiconductor diode device with lateral transistor Semiconductor diode device with lateral transistor

2007-04-16

2009-12-15

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

C257S577000, C257SE27023, C257SE27032, C257SE27043

Reexamination Certificate

active

07633139

ABSTRACT:
The invention is directed to a semiconductor device having a diode element which prevents a leakage current due to a vertical parasitic bipolar transistor and enhances current efficiency. An element isolation insulation film is provided on an N well layer, and a first P+layer and a second P+layer are formed on the N well layer surrounded by the element isolation insulation film, the second P+layer being formed at a distance from the first P+layer. An electrode layer is formed on the N well layer between the first P+layer and the second P+layer. An N+layer for a contact is formed on the N well layer between the element isolation insulation film and other element isolation insulation film. The first P+layer is connected with an anode wiring, and the electrode layer, the second P+layer, and the N+layer are connected with a cathode wiring. A diode element utilizing a lateral PNP bipolar transistor is thus formed on the semiconductor substrate.

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