Semiconductor diode device

Details Semiconductor diode device Semiconductor diode device

2005-02-22

2005-02-22

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S080000, C257S087000, C257S101000

Reexamination Certificate

active

06858876

ABSTRACT:
A multi-layer semiconductor diode having a layer of wide bandgap material located between the active layer and a first contact zone, where the active layer and additional wide bandgap layer are of one dopant type, and the first contact zone is of the opposite dopant type. A specific embodiment of the invention comprises a stack formed from a first contact zone (4) of p-type material, a lightly doped p-type active layer (2), an additionalplayer (20) and a second contact zone (6) of n-type material. The diode may be used as an infrared detector or a negative luminescent source.

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Benjaminsen, et al. “Auger Suppression in a Noise Performance of HOT HgCdTe IR Detectors”,Mat. Res. Soc. Symp. Proc. vol. 607 pp. 205-211 (2000).

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