Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – Specified materials
Reexamination Certificate
2005-11-29
2005-11-29
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
Specified materials
C257S472000, C257S473000, C422S082030
Reexamination Certificate
active
06969900
ABSTRACT:
A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element different from X, and Z is a Group V element, a semiconductor contact-enhancing layer formed on the active layer and made from a compound having the formula MN, in which M is a Group III element, and N is a Group V element, an ohmic contact layer formed on the semiconductor contact-enhancing layer, and a Schottky barrier contact layer formed on the active layer. The Schottky barrier contact layer is made from a metal that is capable of dissociating a hydrogen molecule into hydrogen atoms.
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Chen Huey-Ing
Lin Kun-Wei
Liu Wen-Chau
Lu Chun-Tsen
Dickey Thomas L.
National Cheng Kung University
Ohlandt Greeley Ruggiero & Perle L.L.P.
Tran Minhloan
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