Fishing – trapping – and vermin destroying
Patent
1989-09-12
1991-09-10
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 84, 437228, 437234, 437904, H01L 2104
Patent
active
050473557
ABSTRACT:
A semiconductor diode has three adjacent regions. The doped regions are doped in the same manner and are separated from one another by a third, intrinsic region. The intrinsic region is dimensioned such that upon application of a specific external voltage at the operating temperature of the diode, it is possible for charge carriers to tunnel from one doped region to the other doped region through the intrinsic region. The semiconductor diode has a planar structure on a semiconductor substrate. A semconductor diode of this kind is suitable for use as a protective diode for other components, particularly when they are mounted on substrates consisting fo connecting semiconductors.
REFERENCES:
patent: 2790037 (1957-04-01), Shockley
patent: 3184350 (1965-05-01), Marinace
patent: 3270231 (1966-08-01), Loebner
patent: 3442011 (1969-05-01), Strieter
patent: 3445686 (1969-05-01), Rutz
patent: 3532562 (1970-10-01), Clawson
patent: 3652324 (1972-03-01), Chu et al.
patent: 3749614 (1973-07-01), Boleky, III et al.
patent: 3769694 (1973-11-01), Collins et al.
patent: 4173763 (1979-11-01), Chang et al.
patent: 4198644 (1980-04-01), Esaki
patent: 4252580 (1981-02-01), Messick
patent: 4261004 (1981-04-01), Masuhara et al.
patent: 4263057 (1981-04-01), Ipri
patent: 4268844 (1981-05-01), Meiners
patent: 4277883 (1981-07-01), Kaplan
patent: 4286275 (1981-08-01), Heiblum
patent: 4339285 (1982-07-01), Pankove
patent: 4371884 (1983-02-01), Esaki et al.
patent: 4396931 (1983-08-01), Dumke et al.
patent: 4468851 (1984-09-01), Wieder et al.
patent: 4494016 (1985-01-01), Ransom et al.
patent: 4504840 (1985-03-01), Chappell et al.
patent: 4527213 (1985-07-01), Ariizumi
patent: 4546366 (1985-10-01), Buchanan
patent: 4556896 (1985-12-01), Ohata
patent: 4581621 (1986-04-01), Reed
patent: 4583105 (1986-04-01), Rosenberg
patent: 4593301 (1986-06-01), Inata et al.
Lemay, "Manufacture of Semiconductor Devices", IBM TD13, vol. 5, No. 2, Jul. 1962, p. 17.
Ghandhi, S. K., VLSI Fabrication Principles, Silicon and Gallium Arsenide, John Wiley & Sons, Inc. (1983), p. 300, .pi.2, p. 301, .pi.2.
IEEE Journal of Solid-State Circuits, vol. SC-17, No. 4, Aug. 1982, pp. 648 to 653, Nambu et al.
"Semiconductor and Electronic Devices 2nd Edition", by A. Bar-Lev, pp. 136 to 145.
"pn-Ubergange", by Ihre Physik, New York/1979, 9 pages.
"Punch-Through Gate Protection of M.O.S. Devices", by Miller et al.
Huber Jakob
Pettenpaul Ewald
Hearn Brian E.
Hugo Gordon V.
Siemens Aktiengesellschaft
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