Semiconductor diode and method

Details Semiconductor diode and method Semiconductor diode and method

1990-08-20

1991-11-19

Hille, Rolf

357 54, 357 71, H01L 2990, H01L 2194

Patent

active

050669915

ABSTRACT:
High voltage (200-400 volts) Zener diodes having much improved resistance to degradation under 150.degree. C. HTRB are obtained by a junction passivation comprising a thermal oxide next to the silicon, covered by a TEOS CVD glass, a CVD nitride and a further TEOS CVD glass. Multiple Zener voltages are obtained with otherwise identical, simultaneous wafer processing steps by using epi-wafers having different epi doping and thickness. Back-side lap for wafer thinning is avoided.

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