Semiconductor diode and IGBT

Details Semiconductor diode and IGBT Semiconductor diode and IGBT

2004-12-23

2009-12-22

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

C257S154000, C257S653000, C257S657000, C257S495000, C257SE29335

Reexamination Certificate

active

07635909

ABSTRACT:
A semiconductor diode has an anode, a cathode and a semiconductor volume provided between anode and cathode. A plurality of semiconductor zones are formed in the semiconductor volume, which semiconductor zones are inversely doped with respect to their immediate surroundings, spaced apart from one another and provided in the vicinity of the cathode. The semiconductor zones are spaced apart from the cathode.

REFERENCES:
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patent: 6239466 (2001-05-01), Elasser et al.
patent: 6465863 (2002-10-01), Deboy et al.
patent: 2001/0045567 (2001-11-01), Auerbach et al.
patent: 198 23 944 (1999-12-01), None
patent: 198 43 659 (2000-04-01), None
Wolf and Tauber; Silicon Processing for the VLSI Era vol. 1—Process Technology 2nd Edition; 2000; Ion Implantation for ULSI; Chapter 10.1-10.3; pp. 371-398.

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