Active solid-state devices (e.g. – transistors – solid-state diode – Punchthrough structure device – Punchthrough region fully depleted at zero external applied...
Patent
1993-04-09
1994-07-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Punchthrough structure device
Punchthrough region fully depleted at zero external applied...
257607, 257608, 257609, H01L 29167, H01L 29207, H01L 29227
Patent
active
053291514
ABSTRACT:
The disclosed improved GaAs majority carrier rectifying barrier diodes comprise a p.sup.+ region between semiconductor regions that comprise n-doped material. Exemplary structures are n.sup.+ -i-p.sup.+ -i-n.sup.+ and n.sup.+ -n-p.sup.+ -n-n.sup.+. The improvement comprises use of carbon as the p-dopant and results in readily manufacturable reliable devices.
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Anand Yoginder
Malik Roger J.
AT&T Bell Laboratories
Crane Sara W.
Pacher E. E.
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