Semiconductor diffusion strain gage

Details Semiconductor diffusion strain gage Semiconductor diffusion strain gage

1987-08-26

1989-06-20

Goldberg, E. A.

Electrical resistors

Strain gauge type

296211, 338 5, G01L 122

Patent

active

048412724

ABSTRACT:
A strain gage wherein neutral impurity atoms forming neither donors nor acceptors are doped in a silicon substrate and a diffused resistance element is formed in the doped region, thereby decreasing the temperature coefficient of resistivity without changing the resistivity and decreasing the temperature coefficient of piezoresistance coefficient with no effect on the piezoresistance coefficient which governs the sensitivity of the strain gage.

REFERENCES:
patent: 4510671 (1985-04-01), Kurtz et al.

Affiliated with

Also associated with

Rating

Semiconductor diffusion strain gage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor diffusion strain gage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor diffusion strain gage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-527615