Semiconductor diffusion process

Details Semiconductor diffusion process Semiconductor diffusion process

1970-10-27

1976-01-13

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, H01L 21225

Patent

active

039322394

ABSTRACT:
This disclosure is directed to a semiconductor diffusion process for diffusing impurities into a semiconductor substrate. Open tube phosphorous diffusion process conditions are described wherein diffused region depth control is achieved by the initial deposition time. This permits creation of a diffused region having the benefits of low sheet resistance and shallow depth. Additionally, the diffusion process enables the formation of very thick thermal oxide layers which are particularly useful in MOS or FET device fabrication.

REFERENCES:
patent: 3365794 (1968-01-01), Botka
patent: 3398029 (1968-08-01), Yasufuku et al.
patent: 3442725 (1969-05-01), Huffman et al.
patent: 3474310 (1969-10-01), Ono et al.
"Integrated Circuits," Warner, Jr., (Ed.), McGraw Hill Book Co., N.Y., 1965, pp. 289-290, 304-305.

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