Semiconductor diffused resistors with optimized temperature...

Details Semiconductor diffused resistors with optimized temperature... Semiconductor diffused resistors with optimized temperature...

2006-05-02

2006-05-02

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S358000, C257S363000, C257S516000, C257S543000, C257S607000, C257S904000, C257SE29326

Reexamination Certificate

active

07038297

ABSTRACT:
Ion implanted resistors formed in the body of a crystalline silicon substrate. The resistors have a different conductivity type from that of the silicon substrate. The sheet resistance and temperature dependence of the resistor layer is determined by the dose of the implant. Temperature variation can be optimized to be less than 2% over the temperature range −40 C to +85 C.Furthermore, the temperature variation at room temperature (˜25 C) can be reduced to nearly zero.

REFERENCES:
patent: 3491325 (1970-01-01), Hu
patent: 3548269 (1970-12-01), MacDougall et al.
patent: 3683306 (1972-08-01), Bulthuis et al.
patent: 3829890 (1974-08-01), Perloff et al.
patent: 4590589 (1986-05-01), Gerzberg
patent: 4707909 (1987-11-01), Blanchard
patent: 6255185 (2001-07-01), Coolbaugh et al.
patent: 6835632 (2004-12-01), Shimamoto et al.

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