Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-08-26
2000-08-29
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257374, 257446, 257505, 257506, 257507, 257524, 257336, 257537, 257541, 257543, 257344, 257359, H01L 1900
Patent
active
061113042
ABSTRACT:
According to the present invention, a semiconductor device, and method for producing the same, is provided comprising: a resistance component formed in a component active region enclosed by a component separating-insulating layer on a semiconductor base; one pair of first diffusion layers containing a high concentration of impurities which are provided at both ends of the component active region; silicide layer adhering to a first diffusion layer; second diffusion layer containing a low concentration of impurities which is provided in the component active region between the pair of first diffusion layers; wherein a first diffusion layer and silicide layer comprise the terminal areas of the resistance component, and the second diffusion layer comprises a resistance member area of the resistance component. According to the resistance component of the present invention, the method for manufacturing a semiconductor device according the present invention can be shortened, and a high integration or densification of the semiconductor device can be achieved.
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patent: 3889358 (1975-06-01), Bierhenke
patent: 5227327 (1993-07-01), Sasaki
patent: 5691564 (1997-11-01), Oyamatsu
patent: 5717238 (1998-02-01), Aronowitz et al.
Abraham Fetsum
NEC Corporation
Whitesel J. Warren
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