Semiconductor differential interconnect

Details Semiconductor differential interconnect Semiconductor differential interconnect

2005-05-24

2005-05-24

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Transmission line lead

C257S659000, C257S660000, C257S661000, C257S662000, C257S663000, C438S112000, C438S124000, C438S127000

Reexamination Certificate

active

06897548

ABSTRACT:
An interconnect is described including a semiconductor substrate having opposing surfaces, including first and second insulated conductors for transmitting signals. A third conductor substantially surrounds and is electrically insulated from the first and second insulated conductors. Capacitance between the first insulated conductor and the third conductor is substantially equivalent to capacitance between the second insulated conductor and the third conductor. The first insulated conductor and the second insulated conductor are disposed between the opposing surfaces of the semiconductor substrate.

REFERENCES:
patent: 5729047 (1998-03-01), Ma
patent: 6133621 (2000-10-01), Gaibotti et al.
patent: 20010040274 (2001-11-01), Hidaka
patent: 20020123160 (2002-09-01), Mastromatteo

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