Semiconductor diamond device having improved metal-diamond conta

Details Semiconductor diamond device having improved metal-diamond conta Semiconductor diamond device having improved metal-diamond conta

1995-08-02

1998-05-26

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257486, 257761, 257763, H01L 310312, H01L 27095, H01L 2348, H01L 2352

Patent

active

057570329

ABSTRACT:
A semiconductor device comprising an electrode formed on a semiconductor diamond. The electrode includes a first metal section which is in contact with a surface of the semiconductor diamond and which has a thickness of 100 nm or smaller, and further including a second metal section which is in contact with the first metal section and which has a thickness of equal to or larger than four times the thickness of the first metal section. The second metal section is made of a metal having a melting point of 1000.degree. C. or higher.

REFERENCES:
patent: 4982243 (1991-01-01), Nakahata et al.
patent: 5002899 (1991-03-01), Geis et al.
patent: 5436505 (1995-07-01), Hayashi et al.

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