Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2007-03-13
2007-03-13
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S638000, C257S758000
Reexamination Certificate
active
10454256
ABSTRACT:
A semiconductor device structure includes a passivation layer through which only non-silicon-comprising structures are exposed. The semiconductor device structure is formed by selectively forming the passivation layer on an exposed silicon-comprising surface by exposing surfaces of the semiconductor device to a liquid phase solution supersaturated in silicon dioxide. The exposure is conducted at substantially atmospheric temperature and pressure and achieves an effective passivation layer in an abbreviated time, and without subsequent heat treatment. A wafer that includes a back side coated with such a passivation layer may be subjected to a high-speed electroless process for plating the bond pad with a solder-enhancing material. The semiconductor device structure may also include via holes and microvia holes with walls that are passivated.
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Micro)n Technology, Inc.
Quach T. N.
TraskBritt
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