Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-07-12
2011-07-12
Wilson, Allan R (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S077000, C257SE29104, C257SE29242
Reexamination Certificate
active
07977713
ABSTRACT:
Semiconductor devices are described wherein current flow in the device is confined between the rectifying junctions (e.g., p-n junctions or metal-semiconductor junctions). The device provides non-punch-through behavior and enhanced current conduction capability. The devices can be power semiconductor devices as such as Junction Field-Effect Transistors (VJFETs), Static Induction Transistors (SITs), Junction Field Effect Thyristors, or JFET current limiters. The devices can be made in wide bandgap semiconductors such as silicon carbide (SiC). According to some embodiments, the device can be a normally-off SiC vertical junction field effect transistor. Methods of making the devices and circuits comprising the devices are also described.
REFERENCES:
patent: 2984752 (1961-05-01), Giacoletto
patent: 4216490 (1980-08-01), Ohki
patent: 4364072 (1982-12-01), Nishizawa
patent: 4403396 (1983-09-01), Stein
patent: 4587540 (1986-05-01), Jackson
patent: 5429956 (1995-07-01), Shell et al.
patent: 5747831 (1998-05-01), Loose et al.
patent: 5753938 (1998-05-01), Thapar et al.
patent: 5945701 (1999-08-01), Siergiej et al.
patent: 6096607 (2000-08-01), Ueno
patent: 6444527 (2002-09-01), Floyd et al.
patent: 6870189 (2005-03-01), Harada et al.
patent: 6917054 (2005-07-01), Onose et al.
patent: 7173284 (2007-02-01), Kumar et al.
patent: 7187021 (2007-03-01), Mitra et al.
patent: 7763506 (2010-07-01), Treu et al.
patent: 2005/0181536 (2005-08-01), Tsuji
patent: 2006/0226504 (2006-10-01), Hatakeyama et al.
patent: 2007/0096145 (2007-05-01), Watanabe
patent: 2007/0187715 (2007-08-01), Zhao
patent: 2007/0278540 (2007-12-01), Hoshino et al.
patent: 2008/0280412 (2008-11-01), Tsuji
patent: 2010/0148224 (2010-06-01), Zhao
J.N. Merrett, et al., “RF and DC Characterization of Self-aligned L-band 4H-SiC Static Induction Transistors,” Materials Science Forum, vols. 527-529, 2006, pp. 1223-1226.
J.H. Zhao, et al., “3.6 mΩ•cm2, 1726V 4H-SiC normally-off trenched-and-implanted vertical JFETs and circuit applications,” IEE Proc.-Circuits Devices Syst., vol. 151, No. 3, Jun. 2004.
P. Sannuti, et al., “Channel electron mobility in 4H-SiC lateral junction field effect transistors,” Solid-State Electronics, 49, 2005, pp. 1900-1904.
W. Shockley, “A Unipolar “Field-Effect” Transistor,” Proceedings of the IRE, vol. 40, Issue 11, Nov. 1952, pp. 1365-1376.
I. Sankin, “Edge termination and RESURF technology in power silicon carbide devices,” Ph.D. Dissertation, Mississippi State University, 2006, AAT 3213969, pp. 106-111.
M. Nagata, et al., “A short-channel, punch-through-breakdown-free MOS transistor,” International Electron Devices Meeting, vol. 17, 1971, pp. 2-3.
Legacy CACE User's Guide AixRecipe, Recipe Language for AIXTRON systems, Copyright 1994-2004, AIXTRON AG, Kaskertstrasse 15-17 D-52072 Aashen, Germany.
I. Sankin, et al., “Power SiC MOSFETs,” Advances in Silicon Carbide Processing and Applications, Book Chapter, S. E. Saddow and A. Agrawal, Editors, p. 158.
X. Li, et al., “Gate-Controlled Punch Through Transistor,” Department of Electrical Engineering, University of Idaho.
Merrett Joseph Neil
Sankin Igor
Sheridan David C.
Morris Manning & Martin LLP
Raimund Christopher W.
Semisouth Laboratories, Inc.
Wilson Allan R
LandOfFree
Semiconductor devices with non-punch-through semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor devices with non-punch-through semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices with non-punch-through semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2663171