Semiconductor devices with native aluminum oxide regions

Details Semiconductor devices with native aluminum oxide regions Semiconductor devices with native aluminum oxide regions

1993-09-07

1994-12-13

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 43, 372 49, H01S 319

Patent

active

053735226

ABSTRACT:
A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

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