Semiconductor devices with layers having extended perimeters...

Details Semiconductor devices with layers having extended perimeters... Semiconductor devices with layers having extended perimeters...

2007-06-06

2009-11-03

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

C257S714000, C257SE23098, C257SE23097, C257SE23080

Reexamination Certificate

active

07612447

ABSTRACT:
A semiconductor device is provided, and includes a wafer having first and second opposed metallized major faces and a transistor bonded to the first metallized face of the wafer. The transistor includes a first surface, and the first surface defines a first area. The device further includes a first metal layer bonded to the first surface of the transistor. The first metal layer has a first surface that defines a second area larger than the first area of the transistor. The device further includes a ceramic layer bonded to the first surface of the first metal layer.

REFERENCES:
patent: 5021924 (1991-06-01), Kieda et al.
patent: 5895974 (1999-04-01), Eytcheson et al.
patent: 2003/0022464 (2003-01-01), Hirano et al.
patent: 2006/0006506 (2006-01-01), Watanabe et al.
patent: 2008/0101013 (2008-05-01), Nelson et al.

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