Semiconductor devices with improved turn-off characteristics

Details Semiconductor devices with improved turn-off characteristics Semiconductor devices with improved turn-off characteristics

1976-07-16

1977-09-06

Wojciechowicz, Edward J.

357 15, 357 13, 357 65, 357 90, H01L 2972, H01L 2948, H01L 2990, H01L 2348

Patent

active

040472183

ABSTRACT:
Semiconductor devices, with especial reference to transistors with reduced turn-off times. This improvement includes a low-barrier height metal contact to one of the lightly-doped regions of the device as a replacement for the conventional heavily-doped region or high-low junction structure usually employed for the purpose of providing ohmic contact.

REFERENCES:
patent: 3930909 (1976-01-01), Schmitz et al.

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