Semiconductor devices with extended active regions

Details Semiconductor devices with extended active regions Semiconductor devices with extended active regions

2008-07-30

2011-11-22

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21560, C438S296000, C438S430000

Reexamination Certificate

active

08062953

ABSTRACT:
A method of making a semiconductor device is achieved in and over a semiconductor layer. A trench is formed adjacent to a first active area. The trench is filled with insulating material. A masking feature is formed over a center portion of the trench to expose a first side of the trench between a first side of the masking feature and the first active area. A step of etching into the first side of the trench leaves a first recess in the trench. A first epitaxial region is grown in the first recess to extend the first active area to include the first recess and thereby form an extended first active region.

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International Application No. PCT/US2009/043457, International Search Report and Written Opinion dated Dec. 29, 2009.

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