Patent
1974-11-11
1976-06-15
Smith, Alfred E.
35771, H01L 1900
Patent
active
039640922
ABSTRACT:
A semiconductor device, for example an integrated circuit comprising insulate gate field effect transistors in which the gate electrodes comprise doped portions of a deposted layer of polycrystalline silicon, wherein a first conductive connection layer extends at least partly on insulating material present on one surface of a semiconductor body, said first layer being insulated from and crossing over an underlying, second conductive connection layer which is of semiconductor material locally deposited on said one surface of the semiconductor body, said second layer and the underlying portion of the semiconductor body comprising a quantity of doping substance introduced via said second layer, for example in the case of a silicon gate circuit introduced at the same time as simultaneously doping the gate electrodes and forming the source and drain regions. The form of undercrossing comprising the second conductive connection layer and the underlying doped portion of the semiconductor body can be provided in a simple manner having a very low series resistance compared with prior art forms of undercrossing.
REFERENCES:
patent: 3365707 (1968-01-01), Mayhew
patent: 3659162 (1972-04-01), Toshio et al.
patent: 3823348 (1974-07-01), Agusta et al.
La Roche E. R.
Nigohosian Leon
Smith Alfred E.
Trifari Frank R.
U.S. Philips Corporation
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