Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-02-08
2005-02-08
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S503000
Reexamination Certificate
active
06853003
ABSTRACT:
Semiconductor devices with copper interconnections and MIM capacitors and methods of fabricating the same are provided. The device includes a lower electrode composed of a first copper layer. A first insulation layer covers a lower electrode. A window is formed in the first insulation layer to expose a portion of the lower electrode. A capacitor includes a lower barrier electrode, a dielectric layer, and an upper barrier electrode, which are sequentially formed to cover a sidewall and a bottom of the window. An intermediate electrode composed of a second copper layer fills a remaining space of an inside of the capacitor. A second insulation layer is formed on the intermediate electrode. A connection hole is formed in the second insulation layer to expose a portion of the intermediate electrode. A connection contact plug composed of a third copper layer fills the connection hole. An upper layer composed of a fourth copper layer is formed on the connection contact plug to be connected to the connection contact plug.
REFERENCES:
patent: 6124198 (2000-09-01), Moslehi
patent: 6417537 (2002-07-01), Yang et al.
patent: 10-2000-53454 (2000-08-01), None
patent: 10-2000-55260 (2000-09-01), None
Armacost, M., et al., A High Reliability Metal Insulator Metal Capacitor for 0.18 Copper Technology, IEEE, 2000.
Mills & Onello LLP
Pham Thanh V
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