Patent
1985-11-14
1989-11-21
Munson, Gene M.
357 4, 357 16, H01L 2980, H01L 29225, H01L 4500
Patent
active
048826090
ABSTRACT:
A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is a field effect transistor in which case the Dirac-delta doped layer 13 extends between the source and drain zones (18, 19) respectively. The field effect transistor can be constructed either with a homogeneous structure or with a hetero structure or with a superlattice structure. The field effect transistors described herein have a high transconductance and are capable of operating at high current densities.
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Wood et al, "Complex Free-Carrier Profile Synthesis by Atomic-Plane Doping f MBE GaAs", J. Applied Physics, vol. 51 (1/80), pp. 383-387.
Wood et al., "Hyper-Thin Channel MBE GaAs Power FETs by Single Atomic Plane Doping," IEEE Int. Electron Devices Meeting (12/79), Dig. of Technical Papers, pp. 388-389.
Yamaguchi et al., "A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET)," Japanese Journal of Applied Physics, vol. 22 (1983), suppl. 22-1, pp. 267-270.
Arnold et al., "High Performance Inverted and Large Current Double Interface Modulation-Doped . . .," 320 Applied Physics Letters, 45 (1984), Oct., No. 8, New York.
Fischer Albrecht
Horikoshi Yoshiji
Ploog Klaus
Schubert Erdmann
Max-Planck Gesellschaft zur Forderung der Wissenschafter e.V.
Munson Gene M.
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