Semiconductor devices with at least one monoatomic layer of dopi

Details Semiconductor devices with at least one monoatomic layer of dopi Semiconductor devices with at least one monoatomic layer of dopi

1985-11-14

1989-11-21

Munson, Gene M.

357 4, 357 16, H01L 2980, H01L 29225, H01L 4500

Patent

active

048826090

ABSTRACT:
A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is a field effect transistor in which case the Dirac-delta doped layer 13 extends between the source and drain zones (18, 19) respectively. The field effect transistor can be constructed either with a homogeneous structure or with a hetero structure or with a superlattice structure. The field effect transistors described herein have a high transconductance and are capable of operating at high current densities.

REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4205329 (1980-05-01), Dingle et al.
patent: 4410902 (1983-10-01), Malik
patent: 4591889 (1986-05-01), Gossard et al.
Wood et al, "Complex Free-Carrier Profile Synthesis by Atomic-Plane Doping f MBE GaAs", J. Applied Physics, vol. 51 (1/80), pp. 383-387.
Wood et al., "Hyper-Thin Channel MBE GaAs Power FETs by Single Atomic Plane Doping," IEEE Int. Electron Devices Meeting (12/79), Dig. of Technical Papers, pp. 388-389.
Yamaguchi et al., "A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET)," Japanese Journal of Applied Physics, vol. 22 (1983), suppl. 22-1, pp. 267-270.
Arnold et al., "High Performance Inverted and Large Current Double Interface Modulation-Doped . . .," 320 Applied Physics Letters, 45 (1984), Oct., No. 8, New York.

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