Semiconductor devices with a field shaping region

Details Semiconductor devices with a field shaping region Semiconductor devices with a field shaping region

2008-09-09

2008-09-09

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to increase breakdown voltage

C257S107000, C257S409000, C438S133000, C438S197000

Reexamination Certificate

active

10556802

ABSTRACT:
A semiconductor device, for example a diode (200), having a pn junction (101) has an insulating material field shaping region (201) adjacent, and possibly bridging, the pn junction. The field shaping region (201) preferably has a high dielectric constant and is coupled via capacitive voltage coupling regions (204,205) to substantially the same voltages as are applied to the pn junction. When a reverse voltage is applied across the pn junction (101) and the device is non-conducting, a capacitive electric field, is present in a part of the field shaping region which extends beyond a limit of the pn junction depletion region which would exist in the absence of the field shaping region (201), the electric field in the field shaping region inducing a stretched electric field limited to a correspondingly stretched pn junction depletion region (208,209) and an increased reverse breakdown voltage of the device.

REFERENCES:
patent: 5323041 (1994-06-01), Matsushita et al.
patent: 2001/0048131 (2001-12-01), Hurkx et al.
patent: 2002/0030237 (2002-03-01), Omura et al.
patent: 2003/0006458 (2003-01-01), Terashima
patent: 0 519 741 (1992-12-01), None
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patent: 1 291 926 (2003-03-01), None
patent: WO 03/043089 (2003-05-01), None
“Permittivity (Dielectric Constant) of Inorganic Solids” in CRC Handbook of Chemistry and Physics, Internet Version 2007, (87th edition), David R. Lide, ed., Taylor and Francis, Boca Raton FL.
Patent Abstracts of Japan vol. 2000, No. 09, Oct. 13, 2000.

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