Semiconductor devices using epitaxial silicides on (111) surface

Details Semiconductor devices using epitaxial silicides on (111) surface Semiconductor devices using epitaxial silicides on (111) surface

1993-07-09

1994-06-21

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

Specified materials

257486, 257621, 257622, 257627, 257754, H01L 2948

Patent

active

053230531

ABSTRACT:
In accordance with the present invention, a silicon device fabricated on a (100) silicon substrate is provided with a (111) slant surface and an electrical contact comprising epitaxial low Schottky barrier silicide is formed on the (111) surface. For example, low resistance rare earth silicide contacts on V-groove surfaces are provided for the source and drain contacts of a field effect transistor. The resulting high quality contact permits downward scaling of the source and drain junction depths. As another example, rare earth silicide Schottky contacts are epitaxially grown on V-groove surfaces to provide low voltage rectifiers having both low power dissipation under forward bias and low reverse-bias leakage current.

REFERENCES:
patent: 5040034 (1991-08-01), Murakami et al.
Mok et al-IEEE Transactions on Electron Devices vol. ED-25, No. 10, Oct. 1978.
M. Gurvitch, et al. "Preparation & Chararacterization of Epitaxial Yttrium Silicide on (111) Silicon", Mat. Res. Soc. Symp. Proc., vol. 91 (1987) pp. 457-465.
K N. Tu, et al. "Low Schottky barrier of rare-earth silicide on n-Si", Appl. Phys. Lett. 38, pp. 626-628 (1981).
H. Norde, et al. "The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type silicon", Appl. Phys. Lett 38, pp. 865-867 (1981).

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