Semiconductor devices shared element(s) apparatus and method

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S040000

Reexamination Certificate

active

10881389

ABSTRACT:
Two or more semiconductor devices (21and22) are formed on a substrate (20) and are each comprised of a plurality of printed components (23and24). At least one such printed component (25) is shared by both such semiconductor devices.

REFERENCES:
patent: 6273561 (2001-08-01), Ahn
patent: 6934570 (2005-08-01), Kiani et al.
patent: 6953956 (2005-10-01), Or-Bach et al.
patent: 2003/0020844 (2003-01-01), Albert et al.
patent: 2004/0087063 (2004-05-01), Akhavin et al.
Klauk, H., et al. “Fast Organic Thin Film Transistor Circuits.” Jackson's Electronics Research Group IEEE Electron Device Letters. vol. 20, No. 6. Jun. 1999. pp. 289-291.
Ullmann, A., et al. “High Performance Organic Field-Effect Transistors and Integrated Inverters.” © 2001 Materials Research Society. vol. 665. Pages C7.5.1-C7.5.6.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor devices shared element(s) apparatus and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices shared element(s) apparatus and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices shared element(s) apparatus and method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3797629

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.