Semiconductor devices of the planar type bipolar transistors and

Details Semiconductor devices of the planar type bipolar transistors and Semiconductor devices of the planar type bipolar transistors and

1993-10-20

1995-04-04

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257378, 257557, 257561, 257577, H01L 2973, H01L 2940, H01L 2706

Patent

active

054040434

ABSTRACT:
A sidewall construction is utilized in the fabrication of semiconductor devices comprising planar type bipolar transistors wherein the width of the sidewall construction can be accuracy controlled which, in turn, controls accuracy the channel length of the base of the planar type bipolar transistors. This technique provides ways of preventing short circuiting between the formed transistor collector and emitter regions of the planar type bipolar transistors. The sidewall construction can also be employed in fabrication combination planar type bipolar/MIS type transistors resulting in higher density of these structures over the prior art laterally positioned structures.

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ESSDERC '89 19th European Solid State Devices Research Conference, "The Influence of Cleaning on SiO2 Growth", R. Wiget, et al., Sep. 11, 1989, pp. 370-373.
Materials Science & Engineering B, "The Role of Atmospheric Oxygen and Water in the Generation of Water Marks on the Silicon Surface in Cleaning Processes", M. Watanabe, et al., vol. B4, No. 1/4, Oct. 1989, pp. 401-405.

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