Semiconductor devices incorporating p-type and n-type impurity i

Details Semiconductor devices incorporating p-type and n-type impurity i Semiconductor devices incorporating p-type and n-type impurity i

1995-06-29

1997-03-04

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, 257 83, 257 85, H01S 318, H01L 3112

Patent

active

056087535

ABSTRACT:
Novel semiconductor devices are monolithically defined with p-type and n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneously forming the n-type and p-type layer disordered regions with sufficiently abrupt transitions from disordered to as-grown material. The novel devices include a heterojunction bipolar transistor monolithically integrated with an edge emitting heterostructure laser or a surface emitting laser, a heterostructure surface emitting laser, a heterostructure surface emitting laser having active distributed feedback, devices containing multiple buried layers which are individually contacted such as p-n junction surface emitting lasers, carrier channeling devices, and "n-i-p-i" or hetero "n-i-p-i" devices, and novel interdigitated structures, such as optical detectors and distributed feedback lasers.

REFERENCES:
patent: 4766472 (1988-08-01), Brillouet et al.
patent: 4824798 (1989-04-01), Burnham et al.
patent: 4837607 (1989-06-01), Kemmer et al.
patent: 4901993 (1989-01-01), Ankri et al.
patent: 4987468 (1991-01-01), Thornton
patent: 5013684 (1991-05-01), Epler et al.
patent: 5038185 (1991-08-01), Thornton
patent: 5062115 (1991-10-01), Thornton
patent: 5164797 (1992-11-01), Thornton
patent: 5231298 (1993-07-01), Daly
patent: 5317586 (1994-05-01), Thornton et al.
patent: 5323026 (1994-06-01), Paoli
patent: 5455429 (1995-10-01), Paoli et al.
"A1GaAs/GaAs Lateral Current Injection Multiquantum Well (LCI-MQW) Laser Using Impurity-Induced Disordering", A. Furuya et al., IEEE Journal of Quantum Electronics, vol. 23, No. 12, Dec. 1988, pp. 2448-2453.
"The Diffusion of Silicon in Gallium Arsenide", G. R. Antell, 1965, Solid-State Electronics, vol. 8 pp. 943-946 (No month avail).
"Diffusion of silicon in gallium arsenide using rapid thermal processing: Experimental and model", Greiner et al., Applied Physics Letters, Vo. 44(8) pp. 750-752 (Apr. 15, 1984).
"Disorder of an A1.sub.x Ga.sub.1-x As-GaAs Superlattice by Donor Diffusion", K. Meehan, et al., Applied Physics Letters, vol. 45(5), pp. 549-551, (Sep. 1, 1984).
"Design of Fabry-Perot Surface-Emitting Lasers with a Periodic Gain Structure", S. W. Corzine at al., IEEE Journal of Quantum Electronics, vol. 25, No. 6, pp. 1513-1524, Jun. 1989.
"Fabrication of Low Threshold Voltage Microlasers", Scherer et al., Electronics Letters, vol. 28, No. 13, pp. 1224-1226, Jun. 18, 1992.
"Channelling photodiode: A new versatile interdigitated p-n junction photodetector", F. Capasso et al., Applied Phys. Lett. 41(1), pp. 94-946, Nov. 15, 1982.
"Doping (n-i-p-i) Superlattices", Dohler et al., Academic Press, Inc., Synthetic Modulated Structures, pp. 163-214, 2985 (No month avail).

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