Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier
Reexamination Certificate
2006-08-01
2010-06-01
Pham, Hoai V (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
C257S484000, C257SE27040, C257SE29338
Reexamination Certificate
active
07728402
ABSTRACT:
A semiconductor device includes a semiconductor layer having a first conductivity type, a metal contact on the semiconductor layer and forming a Schottky junction with the semiconductor layer, and a semiconductor region in the semiconductor layer. The semiconductor region and the semiconductor layer form a first p-n junction in parallel with the Schottky junction. The first p-n junction is configured to generate a depletion region in the semiconductor layer adjacent the Schottky junction when the Schottky junction is reversed biased to thereby limit reverse leakage current through the Schottky junction. The first p-n junction is further configured such that punch-through of the first p-n junction occurs at a lower voltage than a breakdown voltage of the Schottky junction when the Schottky junction is reverse biased.
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Agarwal Anant
Ryu Sei-Hyung
Zhang Qingchun
Cree Inc.
Myers Bigel & Sibley & Sajovec
Pham Hoai V
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