Semiconductor devices having VMOS transistors and VMOS dynamic m

Details Semiconductor devices having VMOS transistors and VMOS dynamic m Semiconductor devices having VMOS transistors and VMOS dynamic m

1979-08-31

1981-02-10

Edlow, Martin H.

357 23, 357 55, H01L 2702, H01L 2906

Patent

active

042505194

ABSTRACT:
A semiconductor device has VMOS transistors and VMOS dynamic memory cells which are formed on the same semiconductor substrate of a first conductivity type. A buried layer of the opposite conductivity type is formed between the substrate and an epitaxial layer having V-grooves for the VMOS dynamic memory cells. In the buried layer are formed buried layers of the first conductivity type serving as sources and capacitors for the VMOS dynamic memory cells.

REFERENCES:
patent: 4065783 (1977-12-01), Ouyong
patent: 4084175 (1978-04-01), Ouyang
patent: 4109270 (1978-08-01), von Basse
patent: 4131097 (1978-12-01), Ouyang
patent: 4173765 (1979-11-01), Heald
patent: 4194283 (1980-03-01), Hoffmann

Affiliated with

Also associated with

Rating

Semiconductor devices having VMOS transistors and VMOS dynamic m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices having VMOS transistors and VMOS dynamic m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices having VMOS transistors and VMOS dynamic m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1668123