Semiconductor devices having stress relief layers and...

Details Semiconductor devices having stress relief layers and... Semiconductor devices having stress relief layers and...

2011-07-12

2011-07-12

Landau, Matthew C. (Department: 2813)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C257S669000, C257S778000

Reexamination Certificate

active

07977160

ABSTRACT:
Methods are provided for fabricating a semiconductor device. In accordance with an exemplary embodiment, a method comprises the steps of providing a semiconductor die having a conductive terminal, forming an insulating layer overlying the semiconductor die, and forming a cavity in the insulating layer which exposes the conductive terminal. The method also comprises forming a first stress-relief layer in the cavity, forming an interconnecting structure having a first end electrically coupled to the first stress-relief layer, and having a second end, and electrically and physically coupling the second end of the interconnecting structure to a packaging substrate.

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