Semiconductor devices having strain-induced lateral confinement

Details Semiconductor devices having strain-induced lateral confinement Semiconductor devices having strain-induced lateral confinement

1989-03-16

1991-04-30

Wimer, Michael C.

357 4, 357 16, 357 26, H01L 29000, H01L 49000, H01L 29240, H01L 29960

Patent

active

050123041

ABSTRACT:
A semi-conductor device having the properties of carrier confinement induced by local variations of strain comprising a semi-conductor base material, a vertical confinement layer over the semi-conductor base material for vertical confining charge carriers and a strain layer which creates a local strain pattern in the underlying semi-conductor material which strain pattern laterally confines charge carriers in accordance with the strain pattern. The semi-conductor base may include a quantum-well, e.g., one formed utilizing a superlattice structure, where the charge carriers are laterally confined within the quantum well by the strain pattern.

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