Semiconductor devices having improved low-resistance contacts to

Details Semiconductor devices having improved low-resistance contacts to Semiconductor devices having improved low-resistance contacts to

1980-07-25

1982-03-09

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136260, 29572, 427 74, 427 88, 156625, 357 30, 357 65, 357 71, H01L 3104, H01L 3118

Patent

active

043190693

ABSTRACT:
There are disclosed a semiconductor device comprising a layer of polycrystalline p-type CdTe and a variety of metals in low-resistance contact, and a process and preferred etchant for obtaining the contact. A layer comprising tellurium is provided between the metal contact and the layer of p-type CdTe. The surface portion of the CdTe layer adjacent to the tellurium-containing layer is cadmium-deficient, and the grain boundaries of the CdTe layer are preserved intact.

REFERENCES:
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patent: 3785891 (1974-01-01), Vrieze et al.
patent: 3993533 (1977-11-01), Milnes et al.
patent: 4207119 (1980-06-01), Tyan
A. L. Fahrenbruch et al. II-VI Photovoltaic Heterojunctions for Solar Energy Conversion", Conf. Record, 11th IEEE Photovoltaic Specialists Conf. (1975), pp. 490-496.
R. H. Bubes et al., "Photovoltaic Energy Conversion With n-CdS-pCdTe Heterojunctions and Other II-VI Junctions", IEEE Trans. Electron Devices, vol. ED-, 24 pp. 484-492 (1977).
R. N. Zitter "Ramon Detection of Tellurium Layers on Surfaces of CdTe", Surface Science, vol. 28, pp.335-338 (1971).
R. N. Zitter et al., "Photoeffects in CdTe With Acid-Grown Te Layers", J. Appl. Phys., vol. 46, pp. 1405-1406 (1975).
K. Zanio, "Semiconductors and Semimetals-vol. 13-Cadmium Telluride", Academic Press, New York (1978), pp. 184-203.
M. Inoue et al., "Etch Pits and Polarity in CdTe Crystals", J. Appl. Phys., vol. 33, pp. 2578-2582 (1962).
T. Ichimiya et al., "Effect of Impurity Doping Upon the Electrical Properties of Cadmium Telluride", Solid State Phys. Electron Telecommun., Proc. Int. Conf., vol. 2, p. 845 (1952).

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