Semiconductor devices having improved alignment marks

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 55, 357 85, H01L 2176, H01L 2195

Patent

active

043386202

ABSTRACT:
A semiconductor device comprises a V-groove isolation structure and an alignment mark having a sharp contour. The alignment mark consists of a locally thick portion of an oxide layer covering an epitaxial layer in which a V-groove is formed. The alignment mark is produced by a thermal oxidizing operation involved in the manufacturing procedure of the V-groove isolation structure.

REFERENCES:
patent: 3623218 (1971-11-01), Mitari et al.
patent: 3624463 (1971-11-01), Davidsohn
patent: 3766438 (1973-10-01), Castrucci
patent: 3783044 (1974-01-01), Cheskis
patent: 3844858 (1974-10-01), Bean
patent: 3847687 (1974-11-01), Davidsohn
patent: 3975221 (1976-08-01), Rodgers
patent: 4037306 (1977-07-01), Gutteridge et al.
patent: 4187516 (1980-02-01), Legat et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor devices having improved alignment marks does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices having improved alignment marks, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices having improved alignment marks will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2171453

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.