Semiconductor devices having amorphous silicon-carbon...

Details Semiconductor devices having amorphous silicon-carbon... Semiconductor devices having amorphous silicon-carbon...

2008-04-01

2008-04-01

Pham, Thanhha S. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257SE23077, C257SE21576

Reexamination Certificate

active

07352065

ABSTRACT:
A method for fabricating a semiconductor device having a plurality of layers, depositing a first layer comprising a medium-k dielectric barrier layer on one of the plurality of layers, depositing a second layer comprising a low-k dielectric layer on the first layer, and depositing a third layer comprising a medium-k dielectric barrier on the second layer.

REFERENCES:
patent: 5569487 (1996-10-01), DeVre et al.
patent: 5638251 (1997-06-01), Goel et al.
patent: 5774326 (1998-06-01), McConnelee et al.
patent: 5942769 (1999-08-01), Grill et al.
patent: 5973908 (1999-10-01), Saia et al.
patent: 6080470 (2000-06-01), Dorfman
patent: 6187663 (2001-02-01), Yu et al.
patent: 6218299 (2001-04-01), Akahori et al.
patent: 6943127 (2005-09-01), Cho et al.
PCT International Search Report based on PCT/US05/32382 dated Feb. 21, 2007.

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