Semiconductor devices employing high resistivity in-based compou

Details Semiconductor devices employing high resistivity in-based compou Semiconductor devices employing high resistivity in-based compou

1988-04-20

1989-12-19

Davie, James W.

Coherent light generators

Particular component circuitry

Optical pumping

357 17, 372 46, 437129, H01L 3300, H01S 319

Patent

active

048886246

ABSTRACT:
High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also described is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.

REFERENCES:
patent: 4193835 (1980-03-01), Inoue
patent: 4482423 (1984-11-01), Besomi
patent: 4573255 (1986-03-01), Gordon
patent: 4595454 (1986-06-01), Dautremont-Smith
patent: 4660208 (1987-04-01), Johnston, Jr. et al.
D. P. Wilt et al., "Channeled Substrate Buried . . .", Appl. Phys. Lett., 44 (3), 1 Feb. 1984, pp. 290-292.
J. P. Donnelly et al., "High-Resistivity Layers in N-InP Produced by Fe Ion Implantation", Solid-State Electronics, vol. 21, No. 1, Jan. 1978, pp. 475-477.
"InGaAsP Double-Channel-Planar-Buried Heterostructure Laser Diode (DC-PBH LD) with Effective Current Confinement", J. of Lightwave Tech., vol. LT-1, No. 1 (Mar., 1983), I. Mito et al., pp. 195-202.
"The Growth of Epitaxial InP by the Chloride Process in Nitrogen and in the Presence of Phosphine", J. of Crystal Growth, vol. 61, pp. 695-697, (1983), P. L. Giles et al.
"UV Absorption Spectroscopy for Monitoring Hydrive Vapor14 Phase Epitaxy of InGaAsP Alloys", J. Appl. Phys., vol. 60, Jul. 15, 1986, pp. 794-799, R. F. Karlicek et al.

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