Semiconductor devices employing Fe-doped MOCVD InP-based layer f

Details Semiconductor devices employing Fe-doped MOCVD InP-based layer f Semiconductor devices employing Fe-doped MOCVD InP-based layer f

1984-06-15

1987-04-21

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

29569L, 29576E, 148 15, 148175, 357 16, 357 17, H01S 319

Patent

active

046602089

ABSTRACT:
High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.

REFERENCES:
patent: 4193335 (1980-03-01), Inoue et al.
"Channeled Substrate Buried Heterostructure InGaAsP/InP Laser Employing a Buried Fe Ion Implant for Current Confinement", Appl. Phys. Lett., vol. 44, No. 3, pp.-290-292, Feb. 1984, D. P. Wilt et al.
"InGaAsP Double-Channel-Planar-Buried-Heterostructure Laser Diode (DC-PBH-LD) with Effective Current Confinement", Journal of Lightwave Technology, vol. LT-1, No. 1, Mar. 1983, pp. 195-202, I. Mito et al.

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