Metal treatment – Stock – Ferrous
Patent
1979-10-09
1987-10-06
Larkins, William D.
Metal treatment
Stock
Ferrous
148DIG53, 148DIG88, 357 41, 357 2315, 437 40, 437141, H01L 2976
Patent
active
046986537
ABSTRACT:
A field effect transistor is disclosed similar to a junction field effect transistor, but in which the depletion width in the channel due to a PN junction adjoining the channel is controlled not by directly controlling the reverse voltage on the PN junction, but by reverse biasing a second PN junction such that the depletion region from the second PN junction meets the depletion region from the first PN junction (on the side other than the channel side) to thus restrict the width of the depletion regions due to the first PN junction.
REFERENCES:
patent: 3223904 (1965-12-01), Warner, Jr. et al.
patent: 3264492 (1966-08-01), Gault
patent: 3271587 (1966-09-01), Schreiner
patent: 3335342 (1967-08-01), Leistils, Jr. et al.
patent: 3360698 (1967-12-01), Warner, Jr. et al.
patent: 3398337 (1968-08-01), So
patent: 3404295 (1968-10-01), Warner, Jr.
patent: 3414782 (1968-12-01), Lin et al.
patent: 3472710 (1969-10-01), Welty
patent: 3506888 (1970-04-01), Siebertz et al.
patent: 3533159 (1970-10-01), Hudson, Jr.
patent: 3538399 (1970-11-01), Bresee et al.
patent: 3564356 (1971-02-01), Wilson
patent: 3591840 (1971-07-01), Glinski
patent: 3594241 (1971-07-01), Bresee
patent: 3701198 (1972-10-01), Glinski
patent: 3704399 (1972-11-01), Glaise
patent: 3764864 (1973-10-01), Okumura et al.
patent: 3794891 (1974-02-01), Takamiya
patent: 3808515 (1974-04-01), Davis et al.
patent: 3821776 (1974-06-01), Hayashi et al.
patent: 3893147 (1975-07-01), Williams et al.
patent: 3999207 (1976-12-01), Arai
patent: 4064525 (1977-12-01), Kano et al.
patent: 4175240 (1979-11-01), Kremlev et al.
Warner, Jr. and Grung, "Bipolar Lock-Layer Transistor", Solid State Electronics, vol. 18, pp. 323-325, Apr. 1975.
Dissertation Abstracts International, vol. 38, No. 3, Sec. B, Sep. 1977, pp. 1331-B to 1332-B, Abst. of Grung Thesis, "Investigation of Lock-Layer . . . ".
LandOfFree
Semiconductor devices controlled by depletion regions does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor devices controlled by depletion regions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices controlled by depletion regions will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2120792