Semiconductor devices containing power and control transistors

Details Semiconductor devices containing power and control transistors Semiconductor devices containing power and control transistors

1992-04-16

1995-07-11

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

257502, 257525, 257552, 257556, A01L 2973, A01L 2970, A01L 27102

Patent

active

054323762

ABSTRACT:
The base region of the power stage and the horizontal isolation region of the integrated control circuit or collector region of a transistor of an integrated circuit consist of portions of an epitaxial layer with a first conductivity type grown in sequence on an underlying epitaxial layer with a second conductivity type opposite the first.

REFERENCES:
patent: 5034337 (1991-07-01), Mosher et al.
S. M. Sze; "Semiconductor devices Physics and Technology"; 1985, pp. 110-111.

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