Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Patent
1996-12-20
1999-11-02
Kelley, Nathan K.
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
257466, 257103, 257440, H01L 2906
Patent
active
059776129
ABSTRACT:
The present invention relates to electronic devices formed in crystallites of III-V nitride materials. Specifically, the present invention simplifies the processing technology required for the fabrication of high-performance electronic devices in III-V nitride materials.
REFERENCES:
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Isamu Akasaki, Hiroshi Amano, Shigetoshi Sota, Hiromitsu Sakai, Toshiyuki Tanaka and Masayoshi Koike, "Stimulated Emission by Current Injection from an AlGaN/GaN/GalnN Quantum Well Device," Jpn. J. Appl. Phys. vol. 34 (1995) pp. L1517-L1519.
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Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku and Yasunobu Sugimoto, "InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets," Jpn. J. Appl. Phys. vol. 35 (1995), pp. L217-L219.
Shota Kitamura, Kazumasa Hiramatsu and Nobuhiko Sawaki, "Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy," Jpn. J.A. Appl. Phys. vol. 34 (1995) pp. L-1184--L1186.
Bour David P.
Bringans Ross D.
Connell G. A. Neville
Goetz Werner K.
Johnson Noble M.
Kelley Nathan K.
Xerox Corporation
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