Semiconductor devices by laser enhanced diffusion

Details Semiconductor devices by laser enhanced diffusion Semiconductor devices by laser enhanced diffusion

1980-10-02

1982-08-10

Newsome, John H.

Coating processes

Electrical product produced

Welding electrode

219121LE, 219121LF, 427 85, B05D 306

Patent

active

043438326

ABSTRACT:
A process is described for the doping of semiconductors utilizing laser beam melting of the semiconductor surface in the presence of a dopant source. By selecting the laser wavelength to satisfy one of several criteria relating the semiconductor absorption coefficient and wafer thickness, or the dopant thickness and doping depth, the heating and melting are constrained to occur in a small local region near the surface where the laser beam impinges. Use of this invention to produce Zener diodes having abrupt doping profiles, as well as other device structures, is also discussed.

REFERENCES:
patent: 3850698 (1974-11-01), Mallozzi et al.
patent: 4015100 (1977-03-01), Gnanamuthu et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4122240 (1978-10-01), Banas et al.
patent: 4243433 (1981-01-01), Gibbons
Affolter et al., "Applied Phys. Let.", V33, No. 2, p. 185, Jul. 1978.
Margalit et al., "Applied Phys. Let.", V33, No. 4, p. 346, Aug. 1978.
Kaplan et al., "Journ. Electro Chem. Soc.", V126, No. 8, Aug. 1979, Abst. No. 503, p. 3616.

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