Semiconductor devices and techniques for controlled optical conf

Details Semiconductor devices and techniques for controlled optical conf Semiconductor devices and techniques for controlled optical conf

1992-03-30

1994-07-05

Davie, James W.

Coherent light generators

Particular resonant cavity

Folded cavity

372 46, 385 14, 385130, 385131, H01S 319

Patent

active

053274482

ABSTRACT:
The disclosure is directed to improved techniques and devices employing an aluminum-bearing III-V semiconductor material and a native oxide of aluminum that is formed in the semiconductor material. Effective optical confinement, tailored to obtain desired operating conditions, can be achieved with a thick native oxide of aluminum that extends through at least one-third of the thickness of the aluminum-bearing layer in which the native oxide is formed. The resultant lateral index step can be made quite large and employed for devices such as ring lasers.

REFERENCES:
patent: 4172906 (1979-10-01), Pancholy
patent: 4176206 (1979-11-01), Inoue
patent: 4291327 (1981-09-01), Tsang
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
patent: 4511408 (1985-04-01), Holonyak, Jr.
patent: 4639275 (1987-01-01), Holonyak, Jr.
patent: 4817103 (1989-03-01), Holonyak, Jr. et al.
patent: 5018811 (1991-05-01), Haavisto et al.
J. M. Dallesasse, N. Holonyak, Jr., A. R. Sugg, T. A. Richard, & N. El-Zein, "Hydrolization Oxidation of Al.sub.x Ga.sub.1-x As-AlAs-GaAs Quantum Well Heterostructures And Superlattices", Appl. Phys. Lett. 57, 2844, Dec. 24, 1990.
J. M. Dallesasse & N. Holonyak, Jr., "Native-Oxide Stripe-Geometry Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Heterostructure Lasers", Appl. Phys. Lett. 58, 394, Jan. 28, 1991.
J. M. Dallesasse, N. Holonyak, Jr., D. C. Hall, N. Elk--Zein A. R. Sugg, S. C. Smith, & R. D. Burnham, "Native-Oxide-Defined Coupled-Stripe Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Heterostructure Lasers", Appl. Phys. Lett. 58, 834, Feb. 25, 1991.
A. R. Sugg, N. Holonyak, Jr., J. E. Baker, F. A. Kish, & J. M. Dallesasse, "Native Oxide Stabilization of AlAs-GaAs Heterostructures", Appl. Phys. Lett. 58, 1199, Mar. 18, 1991.
F. A. Kish, S. J. Caracci, N. Holonyak Jr., J. M. Dallesasse, A. R. Sugg, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, & M. G. Craford, "Native-Oxide Stripe-Geometry In.sub.0.5 (Al.sub.x Ga.sub.1-x),.sub.0.5 P-In.sub.0.5 Ga.sub.0.5 P Heterostructure Laser Diodes", Appl. Phys. Lett. 59, 354, Jul. 15, 1991.
N. El-Zein, N. Holonyak, Jr., F. A. Kish, A. R. Sugg, T. A. Richard, J. M. Dallesasse, S. C. Smith, & R. D. Burnharm, "Native-Oxide-Masked Si Impurity-Induced Layer Disordering Of Al.sub.x Ga.sub.1-x As-Al.sub.y Ga.sub.1-x As-Al.sub.z Ga.sub.1-z As Quantum-Well Heterostructures", J. Appl. Phys. 70, 2031, Aug. 15, 1991.
F. A. Kish, S. J. Caracci, N. Holonyak, Jr., J. M. Dallesasse, K. C. Hsieh, M. J. Ries, S. C. Smith, & R. D. Burnham, "Planar Native-Oxide Index-Guided Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Heterostructure Lasers", Appl. Phys. Lett. 59, 1755, Sep. 30, 1991.
N. El-Zein, F. A. Kish, N. Holonyak, Jr., A. R. Sugg, M. J. Ries, S. C. Smith, J. M. Dallesasse, and R. D. Burnham, "Native-Oxide Coupled-Cavity Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Heterostructure Laser Diodes", Appl. Phys. Lett. 59, 2838, Nov. 25, 1991.
F. A. Kish, S. J. Caracci, N. Holonyak, Jr., and S. A. Maranowski, J. M. Dallesasse, R. D. Burnham, and S. C. Smith, "Visible Spectrum Native-Oxide Coupled-Stripe In.sub.0.5 (Al.sub.x Ga.sub.1-x).sub.0.5 P-In.sub.0.5 Ga.sub.0.5 P Quantum Well Heterostructure Laser Arrays", Appl. Phys. Lett. 59 2883, Nov. 25, 1991.
F. A. Kish, S. J. Caracci, N. Holonyak, Jr., P. Gavrilovic, K. Meehan, & J. E. Williams, "Coupled-Stripe In-Phase Operation Of Planar Native-Oxide Index-Guided Al.sub.y Ga.sub.1-y As-GaAs-In.sub.x Ga.sub.1-x As Quantum-Well Heterostructure Laser Arrays", Appl. Phys. Lett. 60, 71, Jan. 6, 1992.
F. A. Kish, S. J. Caracci, S. A. Maranowski, N. Holonyak, Jr., K. C. Hsieh, C. P. Kuo, R. M. Fletcher, T. D. Osentowski, & M. G. Craford, "Planar native-Oxide Buried-Mesa Al.sub.x Ga.sub.1-x As-In.sub.0.5 (Al.sub.y Ga.sub.1-y).sub.0.5 P-In.sub.0.5 (Al.sub.z Ga.sub.1-z).sub.0.5 P Visible-Spectrum Laser Diodes", J. Appl. Phys. 71, 2521, Mar. 15, 1992.
M. J. Ludowise, "Metalorganic Chemical Vapor Deposition Of III-V Semiconductors", J. Appl. Phys., 58, R31 1985.
G. E. Smith, "Phase Matching In Four-Layer Optical Waveguides", IEEE J. Quantum Electron., QE-4, 288 May (1968).
E. Marcatelli, "Bends In Optical Dielectric Guides", Bell Syst. Tech. J. 48, 2103, Sep. 1969.
P. Sansonetti et al., "Low-Threshold GaAs/GaAlAs Buried Heterostructure Laser With An Ion-Beam Etched Laser With An Ion-Beam-Etched Quarter Ring Cavity", Electron Lett. 23, 485 May (1987).
J. Butler et al., "Coupled-Mode Analysis Of Phase-Locked Injection Laesr Arrays", Appl Phys. Lett., 44, 293, Feb. 1984.
L. J. Guido, W. E. Plano, G. S. Jackson, N. Holonyak, Jr., R. D. Burnham, & J. E. Epler, "Coupled-Stripe Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Lasers Defined By Vacancy-Enhanced Impurity-Induced Layer Disordering From (Si.sub.2).sub.y (GaAs).sub.1-y Barriers", Appl. Phys. Lett. 50, 757 Mar. (1987).
J. S. Major, Jr., D. C. Hall, L. J. Guido, N. Holonyak Jr., P. Gavrilovic, K. Meehan, J. E. Williams, & W. Stutius, "High-Power Disorder-Defined Coupled Stripe Al.sub.y Ga.sub.1-y As-GaAs-In.sub.x Ga.sub.1-x As Quantum Well Heterostructure Lasers", Appl. Phys. Lett. 55, 271 Jul. 1989.
J. Carran et al., "GaAs Lasers Utilizing Light Propagation Along Curved Junctions", IEEE J. Quantum Electron. QE-6 367 Jun. (1970).
A. S. H. Liao et al., "Semiconductor Injection Lasers With a Circular Resonator", Appl. Phys. Lett. 36, 801 May (1980).
D. G. Deppe, G. S. Jackson, N. Holonyak, Jr., R. D. Burnham, & R. L. Thorton, "Coupled Stripe Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Lasers Defined By Impurity-Induced (Si) Layer Disordering", Appl. Phys. Lett. 50, 632 Mar. 1987.
R. D. Dupuis et al., Proceedings of the International Symposium on GaAs and Related Compounds, "Preparation And Properties Of Ga.sub.1-x Al.sub.x As-GaAS Heterojunctions Grown By Metallorganic Chemical Vapour Deposition", pp. 1-9, Inst. of Physics, London, 1979 (no month).

Affiliated with

Also associated with

Rating

Semiconductor devices and techniques for controlled optical conf does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices and techniques for controlled optical conf, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices and techniques for controlled optical conf will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-802206