Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-03-20
2007-03-20
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S698000, C257SE23011, C257SE23019
Reexamination Certificate
active
10341339
ABSTRACT:
A substrate used in a semiconductor device. The substrate includes a first wiring layer, a second wiring layer, and an interconnection-wiring layer. The first wiring layer includes a plurality of first pads, and the second wiring layer includes a plurality of second pads. The interconnection-wiring layer is set between the first and second wiring layer. In this case, at least one of the second pads that does not electrically connect to anyone of the first pads electrically connects to the interconnection-wiring layer. In another case, a shielding portion, which electrically connects the interconnection-wiring layer, is provided around the second pad that doesn't electrically connect to anyone of the first pads. Furthermore, this invention also discloses a semiconductor device including the substrate.
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patent: 5841192 (1998-11-01), Exposito
patent: 5883427 (1999-03-01), Arimoto
patent: 6285079 (2001-09-01), Kunikiyo
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patent: 6528734 (2003-03-01), Mizunashi
patent: 6753595 (2004-06-01), Lin et al.
patent: 2002-299512 (2002-10-01), None
Lin Wei Feng
Lo Wen-Yu
Wu Chung Ju
Yen Wen-Dong
Birch, Stewart, Kolasch and Birch LLP
Pizarro Marcos D.
Silicon Integrated Systems Corp.
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