Semiconductor devices and methods of manufacturing same

Details Semiconductor devices and methods of manufacturing same Semiconductor devices and methods of manufacturing same

1975-02-18

1976-03-09

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29590, 357 23, B01J 1700

Patent

active

039422410

ABSTRACT:
A gate self-alignment type field-effect semiconductor device is formed with an insulating film deposited on the surface of a substrate. A polycrystal silicon doped with impurities having a type of conductivity opposite to the conductivity of the substrate extends through a gap in said insulating film to engage the surface of said substrate so as to serve as both a diffusion source and electrode for each of the source and drain of the device.

REFERENCES:
patent: 3475234 (1969-10-01), Kerwin
patent: 3566518 (1971-03-01), Brown
patent: 3699646 (1972-10-01), Vadacz
patent: 3750268 (1973-08-01), Wang

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