Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2006-01-18
2009-12-01
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S777000, C257SE21677, C257SE23011, C257SE21597, C438S107000, C438S109000, C438S244000, C438S387000, C438S455000, C438S459000, C438S667000
Reexamination Certificate
active
07626257
ABSTRACT:
Vertically stacked integrated circuits and methods of fabrication thereof are disclosed. Deep vias that provide vertical electrical connection for vertically stacked integrated circuits are formed early in the manufacturing process, before integrated circuits are bonded together to form a three dimensional integrated circuit (3D-IC).
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Lammers, D., “Sematech Targets Infrastructure for 3-D Chips,” EETimes Online, Jan. 16, 2006, 3 pages, http://www.eetimes.com/showArticle.jhtml?articleID=177100129&printable=true, CMP Media, LLC., Washington, DC.
Fourson George
Infineon - Technologies AG
Slater & Matsil L.L.P.
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