Semiconductor devices and methods of manufacture thereof

Semiconductor device manufacturing: process – Gettering of substrate – By layers which are coated – contacted – or diffused

Reexamination Certificate

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C438S763000, C438S785000, C257SE21317, C257SE21318

Reexamination Certificate

active

07611972

ABSTRACT:
Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming a barrier layer and forming a rare earth element-containing material layer over the barrier layer.

REFERENCES:
patent: 6563182 (2003-05-01), Horikawa
patent: 6683004 (2004-01-01), Inoue et al.
patent: 6921691 (2005-07-01), Li et al.
patent: 2002/0135030 (2002-09-01), Horikawa
patent: 2005/0205896 (2005-09-01), Li et al.
patent: 2005/0255699 (2005-11-01), Jones et al.
patent: 2005/0280104 (2005-12-01), Li
patent: 2005/0282329 (2005-12-01), Li
patent: 2006/0244035 (2006-11-01), Bojarczuk et al.
patent: 2007/0128763 (2007-06-01), Tomino et al.
Deloach, J.D., et al., “Growth-Controlled Cubic Zirconia Microstructure in Zirconia—Titania Nanolaminates,” J. Vac. Sci. Technol. A 20(5), Sep. /Oct. 2002, pp. 1517-1524.
Qadri, S.B., et al., “Structural Stability of ZrO2—Al2O3Thin Films Deposited by Magnetron Sputtering,” J. Vac. Sci. Technol. A 7 (3), May/Jun. 1989, pp. 1220-1224.
Sayan, S., et al., “Thermal Decomposition Behavior of the HfO2/SiO2/Si System,” Journal of Applied Physics, vol. 94, No. 2, Jul. 15, 2003, pp. 928-934.
Scanlan, C.M., et al., “Tetragonal Zirconia Growth by Nanolaminate Formation,” Appl. Phys. Lett., vol. 64, No. 26, Jun. 27, 1994, pp. 3548-3550.
Cartier, E., et al., “Role of Oxygen Vacancies in VFB/VtStability of pFET Metals on HfO2,” 2005 Symposium on VLSI Technology Digest of Technical Papers, 12B-3, 2005, pp. 230-231.
Gavartin, J.L., et al., “Negative Oxygen Vacancies in HfO2as Charge Traps in High-κ Stacks,” Applied Physics Letters, vol. 89, No. 8, 2006, pp. 082908-1-082908-3.
Ruzyllo, J., “Semiconductor OneSource: Semiconductor Materials,” http://www.semi1source.com/materials/downloaded Feb. 12, 2007, 2 pages.
Li, P., et al., “Effect of Dopants on Zirconia Stabilization—An X-ray Absorption Study: I, Trivalent Dopants,” J. Am. Ceram. Soc., vol. 77, No. 1, 1994, pp. 118-128.
Wang, J., et al., “Review Hafnia and Hafnia-Toughened Ceramics,” Journal of Materials Science, vol. 27, 1992, pp. 5397-5430.
Van Dover, R.B., “Amorphous Lanthanide-Doped TiOxDielectric Films,” Applied Physics Letters, vol. 74, No. 20, May 17, 1999, pp. 3041-3043.
Narayanan, V., et al., “Interfacial Oxide Formation and Oxygen Diffusion in Rare Earth Oxide—Silicon Epitaxial Heterostructures,” Applied Physics Letters, vol. 81, No. 22, Nov. 25, 2002, pp. 4183-4185.
Chen, S., et al., “Superior Electrical Properties of Crystalline Er2O3Films Epitaxially Grown on Si Substrates,” Applied Physics Letters, vol. 88, No. 22, 2006, pp. 222902-1-222902-3.
Lee, H., et al., “Electrical Characteristics of a Dy-Doped HfO2Gate Dielectric,” Applied Physics Letters, vol. 79, No. 16, Oct. 15, 2001, pp. 2615-2617.
Fissel, A., et al., “Interface Formation during Molecular Beam Epitaxial Growth of Neodymium Oxide on Silicon,” Journal of Applied Physics, vol. 99, No. 7, 2006, pp. 074105-1-074105-6.
Wagner, M., et al., “Gadolinium Scandate Thin Films as an Alternative Gate Dielectric Prepared by Electron Beam Evaporation,” Applied Physics Letters, vol. 88, No. 17, 2006, pp. 172901-1-172901-3.
Zhao, C., et al., “Ternary Rare-Earth Metal Oxide High-κ Layers on Silicon Oxide,” Applied Physics Letters, vol. 86, No. 13, 2005, pp. 132903-1-132903-3.
Ono, H., et al., “Interfacial Reactions between Thin Rare-Earth-Metal Oxide Films and Si Substrates,” Applied Physics Letters, vol. 78, No. 13, Mar. 26, 2001, pp. 1832-1834.
“Lanthanide,” Wikipedia, http://en.wikipedia.org/wiki/Lanthanide, downloaded Nov. 28, 2006, 2 pages.
“Transition Metal,” Wikipedia, http://en.wikipedia.org/wiki/Transition—metal, downloaded Nov. 28, 2006, 5 pages.
“Rare Earth Element,” Wikipedia, http://en.wikipedia.org/wiki/Rare—earth—element, downloaded Nov. 28, 2006, 1 page.
Wilk, G.D., et al., “High-κ Gate Dielectrics: Current Status and Materials Properties Considerations,” Journal of Applied Physics, Applied Physics Review, vol. 89, No. 10, May 15, 2001, pp. 5243-5275.
Koike, M., et al., “Effect of Hf-N Bond on Properties of Thermally Stable Amorphous HfSiON and Applicability of this Material to Sub-50nm Technology Node LSls,” IEEE, Mar. 2003, 4 pages.
Christen, H.M., et al., “Dielectric and Optical Properties of Epitaxial Rare-Earth Scandate Films and Their Crystallization Behavior,” Applied Physics Letters, vol. 88, No. 26, 2006, pp. 262906-1-262906-3.
Edge, L.F., et al., “Thermal Stability of Amorphous LaScO3Films on Silicon,” Applied Physics Letters, vol. 89, No. 6, 2006, pp. 062902-1-062902-3.
Sivasubramani, P., et al., “Outdiffusion of La and Al from Amorphous LaAlO3in Direct Contact with Si (001),” Applied Physics Letters, vol. 86, No. 20, 2005, pp. 201901-1-201901-3.
Kim, K.H., et al., “Atomic Layer Deposition of Gadolinium Scandate Films with High Dielectric Constant and Low Leakage Current,” Applied Physics Letters, vol. 89, No. 13, 2006, pp. 133512-133512-3.
Edge, L.F., et al., “Suppression of Subcutaneous Oxidation during the Deposition of Amorphous Lanthanum Aluminate on Silicon,” Applied Physics Letters, vol. 84, No. 23, Jun. 7, 2004, pp. 4629-4631.

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