Semiconductor devices, and methods of manufacture of the same

Details Semiconductor devices, and methods of manufacture of the same Semiconductor devices, and methods of manufacture of the same

2005-01-25

2005-01-25

Wille, Douglas (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S099000

Reexamination Certificate

active

06847055

ABSTRACT:
The semiconductor laser device has the lower clad layer, active layer, upper clad layer, contact layer, the insulating film, and the positive electrode sequentially formed on the semiconductor substrate. The upper clad layer, the contact layer and the insulating film form the ridge. The positive electrode covers the upper and side faces of the ridge. The thickness of the positive electrode on the upper and side faces of the ridge is preferably substantially the same and it is not less than 150 nm.

REFERENCES:
patent: 5260588 (1993-11-01), Ohta et al.

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